Electric characterization of micro/nano devices
Electrical
characterization
of
materials
(semiconductors,
insulators
and
metals)
as
well
as
Low-dimensional
(micro
and
nano)
devices
such
as
diodes,
field
effect
transistors
(MOSFETs
and
FETs),
high-mobility
transistors
(HEMTs),
Organic
transistors,
heterostructure
and
superlattice
transistors,
Quantum
Dots
and
Quantum
Wells,
capacitors,
metal-insulator-semiconductor (MIS) devices, metal-insulator-metal (MIM) devices etc.
•
Static and dynamic current-voltage characteristics (DC and AC I-V)
•
Capacitance measurements as a function of voltage and frequency (C-V, C-f)
•
Low frequency noise measurements (LFN)
•
Static
and
dynamic
electrical
reliability
of
devices
using
electrical
stress
(DC
and
AC
electrical stress)
•
Electric
resistance
measurement
of
metals,
organic
and
inorganic
semiconductors
with Van der Pauw method (10-6 Ωcm-103 Ωcm)
•
Mobility
measurement
of
organic
and
inorganic
materials
and
micro/nano
electronic
devices (diodes, transistors, heterojunctions)
•
Spatial
carriers’
density
determination
in
materials
and
devices
(thin
and
ultrathin
films, multilayers)
•
Multiple semiconductor carriers’ determination and contribution in mobility
•
Magnetoresistivity
measurement
in
materials
and
devices
(thin
and
ultrathin
films,
multilayers)
•
Measurements
of
anisotropy
phenomena
during
electric
transport
of
carriers
(electronic transition metal-semiconductor and semiconductor-insulator)
Instrumentation
•
Keithley
4200-SCS
Parameter
Analyzer
for
I-V
and
C-V
measurements
for
devices
with up to four connectors (accuracy 0.1 fA)
•
Fully
automated
device
for
electric
characterization,
static
and
dynamic
electric
stress tests which includes:
o
Voltage and current supplies Keithley
o
Electrometers Keithley (measurement up to 1 fA)
o
HP-Agilent
33120A
function
and
arbitrary
waveform
generator
with
output
voltage amplifier of up to 30 V.
•
Semi-automatic
characterization
device
for
low-frequency
noise
measurements
in
the range 1 Hz-100 kHz which includes:
o
2 SR760 FFT spectrum analyzers
o
2 SR570 low-noise current pre-amplifiers
o
Battery lines NiMH, for device supply
•
2 Probe stations SussMicrotec EP4 for measurements on wafers using spikes
•
Oxford LN cryostat Optistat DN-V for wafers (77-450 K)
•
Cryogenic
device
LakeShore
for
the
temperature
control
of
measured
samples
(10–350 Κ)
•
Hall
conductance
and
magnetoresistance
measuring
setup
operating
at
various
temperatures and magnetic fields (0-1.4 T).
•
2
devices
for
4-contacts
measurements
of
specific
resistivity
using
Van
der
Pauw
method at various temperatures (10–350 Κ)
•
6 high accuracy Keithley ammeters (1 nA)
•
2 Keithley ammeters with accuracy 1 μA
•
8 continuous voltage supplies Keithley (-200-+200 V)
•
2 optic microscopes
•
Alternating voltage supply TTi (1Hz-10 MHz)
Publications
1
.
Contoyiannis,
Y,
et.
al.,
Intermittency-induced
criticality
in
the
random
telegraph
noise
of
nanoscale
UTBB
FD-SOI
MOSFETs
,
Microelectronic
Engineering,
216,111027 (2019).
2
.
Antoniades,
I.P.,
et.
al.,
Tsallis
non-extensive
statistics
and
multifractal
analysis
of
the
dynamics
of
a
fully-depleted
MOSFET
nano-device
,
Physica
A
(533),
121820
(2019).
3
.
D.H.
Tassis,
et.
al.,
Chaotic
Behavior
of
Random
Telegraph
Noise
in
nanoscale
UTBB FD-SOI MOSFETs
, IEEE Transactions on Electron Devices 38, 517 (2017)
4
.
N.G.
Semaltianos,
S.
Logothetidis,
N.
Hastas,
W.
Perrie,
S.
Romani,
R.J.
Potter,
G.
Dearden,
K.G.
Watkins,
P.
French,
M.
Sharp,
Modification
of
the
electrical
properties
of
PEDOT:PSS
by
the
incorporation
of
ZnO
nanoparticles
synthesized
by
laser
ablation
, Chemical Physics Letters 484 (4-6), 283 (2010).
5
.
L.E.
Koutsokeras,
N.
Hastas,
S.
Kassavetis,
O.
Valassiades,
C.
Charitidis,
S.
Logothetidis,
P.
Patsalas,
Electronic
properties
of
binary
and
ternary,
hard
and
refractory
transition
metal
nitrides
,
Surface
and
Coatings
Technology
204
(12-13),
2038 (2010).
6
.
C.
Koidis,
S.
Logothetidis,
S.
Kassavetis,
A.
Laskarakis,
N.A.
Hastas,
O.
Valassiades,
Growth
mechanisms
and
thickness
effect
on
the
properties
of
Al-doped
ZnO
thin
films
grown
on
polymeric
substrates
,
Physica
Status
Solidi
A
Applications
and Materials Science, 207 (7), 1581 (2010).
7
.
P.G.
Karagiannidis,
N.
Kalfagiannis,
D.
Georgiou,
A.
Laskarakis,
N.A.
Hastas,
C.
Pitsalidis
and
S.
Logothetidis,
Effects
of
buffer
layer
properties
and
annealing
process
on
bulk
heterojunction
morphology
and
organic
solar
cell
performance
,
Journal of Materials Chemistry 22 (29), 14624 (2012).
8
.
Y-H.
Lin,
H.
Faber,
J.G.
Labram,
E.
Stratakis,
L.
Sygellou,
E.
Kymakis,
N.A.
Hastas,
R.
Li,
K.
Zhao,
A.
Amassian,
N.D.
Treat,
M.
McLachlan,
T.D.
Anthopoulos,
High
electron
mobility
transistors
based
on
solution-processed
semiconducting
metal
oxide quasi-superlattices
, Advanced Science 2(7), 1599958 (2015)
PHYSICOCHEMICAL
CHARACTERIZATION,
STUDY OF MATERIALS
AND DEVICES
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